bpv23nf(l) vishay semiconductors 1 (6) rev. 3, 16-nov-99 www.vishay.com document number 81513 silicon pin photodiode description bpv23nf(l) is a high speed and high sensitive pin photodiode in a plastic package with a spherical side view lens. the epoxy package itself is an ir filter, spectrally matched to gaas on gaas and gaalas on gaalas ir emitters ( p = 950 nm, s rel ( = 875 nm) > 90 %). lens radius and chip position are perfectly matched to the chip size, giving high sensitivity without compromising the viewing angle. in comparison with flat packages the spherical lens package achieves a sensitivity improvement of 80%. features large radiant sensitive area (a = 5.7 mm 2 ) wide viewing angle j = 60 improved sensitivity fast response times low junction capacitance plastic package with universal ir filter option olo: long lead package optional available with suffix olo; e.g.: bpv23fl 94 8633 applications infrared remote control and free air transmission systems in combination with ir emitter diodes (tsu., tsi., or tsh.series). high sensitivity detector for high data rate transmission systems. the ir filter matches perfectly to the high speed infrared emitters in the 830 nm to 880 nm wavelength range. absolute maximum ratings t amb = 25 c parameter test conditions symbol value unit reverse voltage v r 60 v power dissipation t amb 25 c p v 215 mw junction temperature t j 100 c operating temperature range t amb 55...+100 c storage temperature range t stg 55...+100 c soldering temperature t 5 s t sd 260 c thermal resistance junction/ambient r thja 350 k/w
bpv23nf(l) vishay semiconductors 2 (6) rev. 3, 16-nov-99 www.vishay.com document number 81513 basic characteristics t amb = 25 c parameter test conditions symbol min typ max unit forward voltage i f = 50 ma v f 1 1.3 v breakdown voltage i r = 100 a, e = 0 v (br) 60 v reverse dark current v r = 10 v, e = 0 i ro 2 30 na diode capacitance v r = 0 v, f = 1 mhz, e = 0 c d 48 pf serial resistance v r = 12 v, f = 1 mhz r s 900 open circuit voltage e e = 1 mw/cm 2 , = 950 nm v o 390 mv temp. coefficient of v o e e = 1 mw/cm 2 , = 950 nm tk vo 2.6 mv/k short circuit current e e = 1 mw/cm 2 , = 950 nm i k 65 a reverse light current e e = 1 mw/cm 2 , = 870 nm, v r = 5 v i ra 45 65 a temp. coefficient of i ra e e = 1 mw/cm 2 , = 950 nm, v r = 10 v tk ira 0.1 %/k absolute spectral sensitivity v r = 5 v, = 870 nm s( ) 0.57 a/w y v r = 5 v, = 950 nm s( ) 0.60 a/w angle of half sensitivity j + 60 deg wavelength of peak sensitivity p 940 nm range of spectral bandwidth 0.5 790...1050 nm quantum efficiency = 950 nm 90 % noise equivalent power v r = 10 v, = 950 nm nep 4x10 14 w/ / hz detectivity v r = 10 v, = 950 nm d * 5x10 12 cm / hz/ w rise time v r = 10 v, r l = 1k , = 820 nm t r 70 ns fall time v r = 10 v, r l = 1k , = 820 nm t f 70 ns cutoff frequency v r = 12 v, r l = 1k , = 870 nm f c 4 mhz v r = 12 v, r l = 1k , = 950 nm f c 1 mhz
bpv23nf(l) vishay semiconductors 3 (6) rev. 3, 16-nov-99 www.vishay.com document number 81513 typical characteristics (t amb = 25 c unless otherwise specified) 20 40 60 80 1 10 100 1000 i reverse dark current ( na ) ro t amb ambient temperature ( 5 c ) 100 94 8403 v r =10v figure 1. reverse dark current vs. ambient temperature 020 40 6080 0.6 0.8 1.0 1.2 1.4 i relative reverse light current ra rel t amb ambient temperature ( 5 c ) 100 94 8409 v r =5v =950nm figure 2. relative reverse light current vs. ambient temperature 0.01 0.1 1 0.1 1 10 100 1000 i reverse light current ( a ) ra e e irradiance ( mw / cm 2 ) 10 94 8424 v r =5v =950nm figure 3. reverse light current vs. irradiance 0.1 1 10 1 10 100 v r reverse voltage ( v ) 100 94 8425 i reverse light current ( a ) ra 1 mw/cm 2 0.5 mw/cm 2 0.2 mw/cm 2 0.1 mw/cm 2 0.05 mw/cm 2 0.02 mw/cm 2 =950nm figure 4. reverse light current vs. reverse voltage 0.1 1 10 0 20 40 60 80 c diode capacitance ( pf ) d v r reverse voltage ( v ) 100 94 8423 e=0 f=1mhz figure 5. diode capacitance vs. reverse voltage 750 850 950 1050 0 0.2 0.4 0.6 0.8 1.2 s ( ) relative spectral sensitivity rel wavelength ( nm ) 1150 94 8426 1.0 figure 6. relative spectral sensitivity vs. wavelength
bpv23nf(l) vishay semiconductors 4 (6) rev. 3, 16-nov-99 www.vishay.com document number 81513 0.4 0.2 0 0.2 0.4 s relative sensitivity rel 0.6 94 8413 0.6 0.9 0.8 0 5 30 5 10 5 20 5 40 5 50 5 60 5 70 5 80 5 0.7 1.0 figure 7. relative radiant sensitivity vs. angular displacement dimensions bpv23nf in mm 95 11475
bpv23nf(l) vishay semiconductors 5 (6) rev. 3, 16-nov-99 www.vishay.com document number 81513 dimensions BPV23NFL in mm 9612205
bpv23nf(l) vishay semiconductors 6 (6) rev. 3, 16-nov-99 www.vishay.com document number 81513 ozone depleting substances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( odss ). the montreal protocol ( 1987 ) and its london amendments ( 1990 ) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its policy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2 . class i and ii ozone depleting substances in the clean air act amendments of 1990 by the environmental protection agency ( epa ) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c ( transitional substances ) respectively. vishay semiconductor gmbh can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buyer use vishay-semiconductors products for any unintended or unauthorized application, the buyer shall indemnify vishay-semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany telephone: 49 ( 0 ) 7131 67 2831, fax number: 49 ( 0 ) 7131 67 2423
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